Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS27DN-T1-GE3

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Part NumberSISS27DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A PPAK 1212-8S

DatasheetSiSS27DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS27DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS27DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS27DN-T1-GE3.
We are offering SISS27DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS27DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiSS27DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5250pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS27DN-T1-GE3 - Related Products

	SI4431CDY-T1-E3	Vishay Siliconix, P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI4423DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IRF4905LPBF	Infineon Technologies, P-Channel 55V 42A (Tc) 170W (Tc) Through Hole TO-262, HEXFET®	View
	BSZ120P03NS3GATMA1	Infineon Technologies, P-Channel 30V 11A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SI7137DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	MMSF3P02HDR2G	ON Semiconductor, P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	SIUD401ED-T1-GE3	Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	IRF9620PBF	Vishay Siliconix, P-Channel 200V 3.5A (Tc) 40W (Tc) Through Hole TO-220AB,	View
	ZVP2106A	Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	SI1467DH-T1-E3	Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	PMCM4401UPEZ	Nexperia USA Inc., P-Channel 20V 4A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78),	View
	ZXMP6A17E6QTA	Diodes Incorporated, P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View

SISS27DN-T1-GE3 - Tags

SISS27DN-T1-GE3 SISS27DN-T1-GE3 PDF SISS27DN-T1-GE3 datasheet SISS27DN-T1-GE3 specification SISS27DN-T1-GE3 image SISS27DN-T1-GE3 India Renesas Electronics India SISS27DN-T1-GE3 buy SISS27DN-T1-GE3 SISS27DN-T1-GE3 price SISS27DN-T1-GE3 distributor SISS27DN-T1-GE3 supplier SISS27DN-T1-GE3 wholesales