Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Part NumberSI2301CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-GE3.
We are offering SI2301CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-GE3 - Related Products

	RSR025P03TL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	DMP2021UFDE-7	Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	SQM40031EL_GE3	Vishay Siliconix, P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, TrenchFET®	View
	DMP4050SSS-13	Diodes Incorporated, P-Channel 40V 4.4A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	SIA445EDJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	NTS4101PT1G	ON Semiconductor, P-Channel 20V 1.37A (Ta) 329mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	PMV100XPEAR	Nexperia USA Inc., P-Channel 20V 2.4A (Ta) 463mW (Ta), 1.9W (Tc) Surface Mount TO-236AB,	View
	SI3407-TP	Micro Commercial Co, P-Channel 30V 4.1A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	SI7141DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI4423DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SIUD401ED-T1-GE3	Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	IRFR6215TRPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View

SI2301CDS-T1-GE3 - Tags

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 PDF SI2301CDS-T1-GE3 datasheet SI2301CDS-T1-GE3 specification SI2301CDS-T1-GE3 image SI2301CDS-T1-GE3 India Renesas Electronics India SI2301CDS-T1-GE3 buy SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 price SI2301CDS-T1-GE3 distributor SI2301CDS-T1-GE3 supplier SI2301CDS-T1-GE3 wholesales