SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Part Number SI2301CDS-T1-GE3
Description MOSFET P-CH 20V 3.1A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
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SI2301CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2301CDS
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
FET Feature -
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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