Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Part NumberSI2301CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-GE3.
We are offering SI2301CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-GE3 - Related Products

	NVF6P02T3G	ON Semiconductor, P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261), Automotive, AEC-Q101	View
	NTTFS5116PLTWG	ON Semiconductor, P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	VP2450N8-G	Microchip Technology, P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	BSP250,115	Nexperia USA Inc., P-Channel 30V 3A (Tc) 1.65W (Ta) Surface Mount SC-73,	View
	SQA401EJ-T1_GE3	Vishay Siliconix, P-Channel 20V 3.75A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	NTGS5120PT1G	ON Semiconductor, P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP,	View
	IRF7726TRPBF	Infineon Technologies, P-Channel 30V 7A (Ta) 1.79W (Ta) Surface Mount Micro8™, HEXFET®	View
	RSM002P03T2L	Rohm Semiconductor, P-Channel 30V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View
	MCM1206-TP	Micro Commercial Co, P-Channel 12V 6A (Ta) Surface Mount DFN2020-6J,	View
	FDC608PZ	ON Semiconductor, P-Channel 20V 5.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMP22D6UT-7	Diodes Incorporated, P-Channel 20V 430mA (Ta) 150mW (Ta) Surface Mount SOT-523,	View
	SQM40081EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 107W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View

SI2301CDS-T1-GE3 - Tags

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 PDF SI2301CDS-T1-GE3 datasheet SI2301CDS-T1-GE3 specification SI2301CDS-T1-GE3 image SI2301CDS-T1-GE3 India Renesas Electronics India SI2301CDS-T1-GE3 buy SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 price SI2301CDS-T1-GE3 distributor SI2301CDS-T1-GE3 supplier SI2301CDS-T1-GE3 wholesales