Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Part NumberSI2301CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-GE3.
We are offering SI2301CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-GE3 - Related Products

	AO3415A	Alpha & Omega Semiconductor Inc., P-Channel 20V 5A (Ta) 1.5W (Ta) Surface Mount SOT-23-3L,	View
	CSD22205L	Texas Instruments, P-Channel 8V 7.4A (Ta) 600mW (Ta) Surface Mount 4-PICOSTAR, NexFET™	View
	SI7489DP-T1-GE3	Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF5803TRPBF	Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	AUIRF5210STRL	Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	DMP1555UFA-7B	Diodes Incorporated, P-Channel 12V 200mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,	View
	RQ5E025ATTCL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Tc) Surface Mount TSMT3,	View
	SI4497DY-T1-GE3	Vishay Siliconix, P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SSM6J512NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View
	PMF170XP,115	Nexperia USA Inc., P-Channel 20V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SC-70,	View
	ZXMP4A16KTC	Diodes Incorporated, P-Channel 40V 6.6A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View
	TP2510N8-G	Microchip Technology, P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View

SI2301CDS-T1-GE3 - Tags

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 PDF SI2301CDS-T1-GE3 datasheet SI2301CDS-T1-GE3 specification SI2301CDS-T1-GE3 image SI2301CDS-T1-GE3 India Renesas Electronics India SI2301CDS-T1-GE3 buy SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 price SI2301CDS-T1-GE3 distributor SI2301CDS-T1-GE3 supplier SI2301CDS-T1-GE3 wholesales