Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Part NumberSI2301CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-GE3.
We are offering SI2301CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-GE3 - Related Products

	BSP322PH6327XTSA1	Infineon Technologies, P-Channel 100V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	RQ1A070ZPTR	Rohm Semiconductor, P-Channel 12V 7A (Ta) 700mW (Ta) Surface Mount TSMT8,	View
	IRF9540STRLPBF	Vishay Siliconix, P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	CSD23202W10T	Texas Instruments, P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™	View
	SI3415-TP	Micro Commercial Co, P-Channel 20V 4A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	ATP301-TL-H	ON Semiconductor, P-Channel 100V 28A (Ta) 70W (Tc) Surface Mount ATPAK,	View
	DMP6050SFG-13	Diodes Incorporated, P-Channel 60V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8,	View
	SI4401FDY-T1-GE3	Vishay Siliconix, P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET® Gen III	View
	RTL030P02TR	Rohm Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	IRLML6302TRPBF	Infineon Technologies, P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	BSZ180P03NS3EGATMA1	Infineon Technologies, P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	DMP3015LSS-13	Diodes Incorporated, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View

SI2301CDS-T1-GE3 - Tags

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 PDF SI2301CDS-T1-GE3 datasheet SI2301CDS-T1-GE3 specification SI2301CDS-T1-GE3 image SI2301CDS-T1-GE3 India Renesas Electronics India SI2301CDS-T1-GE3 buy SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 price SI2301CDS-T1-GE3 distributor SI2301CDS-T1-GE3 supplier SI2301CDS-T1-GE3 wholesales