Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

Part NumberSIA817EDJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 4.5A SC-70-6

DatasheetSIA817EDJ

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

To learn about the specification of SIA817EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA817EDJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA817EDJ-T1-GE3.
We are offering SIA817EDJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA817EDJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA817EDJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	LITTLE FOOT®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 15V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.9W (Ta), 6.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Dual
Package / Case	PowerPAK® SC-70-6 Dual

SIA817EDJ-T1-GE3 - Related Products

	SQS401ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	DMP4047LFDE-7	Diodes Incorporated, P-Channel 40V 3.3A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	FQPF47P06	ON Semiconductor, P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
	RRR030P03TL	Rohm Semiconductor, P-Channel 30V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	DMP32D4SFB-7B	Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
	MCT06P10-TP	Micro Commercial Co, P-Channel 100V 6A 1.25W Surface Mount SOT-223,	View
	SI7623DN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	RRR030P03TL	Rohm Semiconductor, P-Channel 30V 3A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	IRFH9310TRPBF	Infineon Technologies, P-Channel 30V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6), HEXFET®	View
	RQ6C065BCTCR	Rohm Semiconductor, P-Channel 20V 6.5A (Tc) 1.25W (Tc) Surface Mount TSMT6 (SC-95),	View
	ZXMP10A16KTC	Diodes Incorporated, P-Channel 100V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View

SIA817EDJ-T1-GE3 - Tags

SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 PDF SIA817EDJ-T1-GE3 datasheet SIA817EDJ-T1-GE3 specification SIA817EDJ-T1-GE3 image SIA817EDJ-T1-GE3 India Renesas Electronics India SIA817EDJ-T1-GE3 buy SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 price SIA817EDJ-T1-GE3 distributor SIA817EDJ-T1-GE3 supplier SIA817EDJ-T1-GE3 wholesales