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SI1427EDH-T1-GE3

SI1427EDH-T1-GE3

Part NumberSI1427EDH-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2A SOT-363

DatasheetSi1427EDH

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)

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SI1427EDH-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si1427EDH
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 8V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.56W (Ta), 2.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6 (SOT-363)
Package / Case	6-TSSOP, SC-88, SOT-363

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SI1427EDH-T1-GE3 - Tags

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