TP2435N8-G
TP2435N8-G
Part Number TP2435N8-G Description MOSFET P-CH 350V 0.231A SOT89-3 Package / Case TO-243AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 350V 231mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
To learn about the specification of TP2435N8-G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TP2435N8-G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TP2435N8-G.
We are offering TP2435N8-G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
TP2435N8-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP2435 Standard Package 1 Manufacturer Microchip Technology Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 231mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-243AA (SOT-89) Package / Case TO-243AA
TP2435N8-G - Related ProductsMore >>
ATP102-TL-H ON Semiconductor, P-Channel 30V 40A (Ta) 40W (Tc) Surface Mount ATPAK,
View
IRF9530STRLPBF Vishay Siliconix, P-Channel 100V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,
View
BSS84-7-F Diodes Incorporated, P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
NVTFS5116PLTWG ON Semiconductor, P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
VP2110K1-G Microchip Technology, P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
SI2367DS-T1-GE3 Vishay Siliconix, P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRF9530PBF Vishay Siliconix, P-Channel 100V 12A (Tc) 88W (Tc) Through Hole TO-220AB,
View
FQP17P10 ON Semiconductor, P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®
View
SSM6J50TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIV
View
AO6409 Alpha & Omega Semiconductor Inc., P-Channel 20V 5.5A (Ta) 2.1W (Ta) Surface Mount 6-TSOP,
View
DMP3056LDM-7 Diodes Incorporated, P-Channel 30V 4.3A (Ta) 1.25W (Ta) Surface Mount SOT-26,
View
SSM3J56ACT,L3F Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI
View
TP2435N8-G - Tags
English
