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RUS100N02TB

RUS100N02TB

Part NumberRUS100N02TB

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 20V 10A 8SOP

DatasheetRUS100N02

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP

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RUS100N02TB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RUS100N02
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 10V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)

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