IRF200B211


IRF200B211

Part NumberIRF200B211

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF200B211 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 50V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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IRF200B211 - Tags

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