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IRF200B211

IRF200B211

Part NumberIRF200B211

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 12A TO-220AB

DatasheetIRF200B211

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB

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IRF200B211 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF200B211
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®, StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id	4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 50V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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