Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RQ3E100MNTB1

RQ3E100MNTB1

RQ3E100MNTB1

Part NumberRQ3E100MNTB1

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 10A HSMT8

DatasheetRQ3E100MN Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

To learn about the specification of RQ3E100MNTB1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RQ3E100MNTB1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RQ3E100MNTB1.
We are offering RQ3E100MNTB1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RQ3E100MNTB1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ3E100MN Datasheet
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9.9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

RQ3E100MNTB1 - Related Products

	FDS3590	ON Semiconductor, N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SIHP10N40D-GE3	Vishay Siliconix, N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB,	View
	IRFB4229PBF	Infineon Technologies, N-Channel 250V 46A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	SIRA20DP-T1-RE3	Vishay Siliconix, N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SFT1443-TL-W	ON Semiconductor, N-Channel 100V 9A (Ta) 1W (Ta), 19W (Tc) Surface Mount DPAK/TP-FA,	View
	FDP18N50	ON Semiconductor, N-Channel 500V 18A (Tc) 235W (Tc) Through Hole TO-220-3, UniFET™	View
	IXTY01N100D	IXYS, N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDB14N30TM	ON Semiconductor, N-Channel 300V 14A (Tc) 140W (Tc) Surface Mount D²PAK, UniFET™	View
	TPH1400ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 24A (Tc) 1.6W (Ta), 48W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	DMTH8012LPSQ-13	Diodes Incorporated, N-Channel 80V 10A (Ta), 72A (Tc) 2.6W (Ta), 136W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	STW48N60M2-4	STMicroelectronics, N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-4L, MDmesh™ M2	View
	IXFQ30N60X	IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™	View

RQ3E100MNTB1 - Tags

RQ3E100MNTB1 RQ3E100MNTB1 PDF RQ3E100MNTB1 datasheet RQ3E100MNTB1 specification RQ3E100MNTB1 image RQ3E100MNTB1 India Renesas Electronics India RQ3E100MNTB1 buy RQ3E100MNTB1 RQ3E100MNTB1 price RQ3E100MNTB1 distributor RQ3E100MNTB1 supplier RQ3E100MNTB1 wholesales