R6004JNJGTL
R6004JNJGTL
Part Number R6004JNJGTL
Description R6004JNJ IS A POWER MOSFET WITH
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS (D2PAK)
To learn about the specification of R6004JNJGTL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6004JNJGTL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6004JNJGTL.
We are offering R6004JNJGTL for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6004JNJGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6004JNJ
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 1.43Ohm @ 2A, 15V
Vgs(th) (Max) @ Id 7V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 15V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 100V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS (D2PAK)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6004JNJGTL - Related ProductsMore >>
IRFP044NPBF
Infineon Technologies, N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-247AC, HEXFET®
View
IRFH5053TRPBF
Infineon Technologies, N-Channel 100V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W (Tc) Surface Mount PQFN (5x6) Single Die, HEXFET®
View
STB11N65M5
STMicroelectronics, N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount D2PAK, MDmesh™ V
View
RQ3G100GNTB
Rohm Semiconductor, N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),
View
IRFP7530PBF
Infineon Technologies, N-Channel 60V 195A (Tc) 341W (Tc) Through Hole TO-247, HEXFET®, StrongIRFET™
View
PSMN3R0-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8,
View
IRFR8314TRPBF
Infineon Technologies, N-Channel 30V 90A (Tc) 125W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
View
IXFT50N30Q3
IXYS, N-Channel 300V 50A (Tc) 690W (Tc) Surface Mount TO-268, HiPerFET™
View
FQP30N06L
ON Semiconductor, N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®
View
STD7LN80K5
STMicroelectronics, N-Channel 800V 5A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™
View
BSS159NH6327XTSA2
Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
SI7336ADP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
R6004JNJGTL - Tags