Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTH1N200P3

IXTH1N200P3

IXTH1N200P3

Part NumberIXTH1N200P3

ManufacturerIXYS

DescriptionMOSFET N-CH 2000V 1A TO-247

DatasheetIXTx1N200P3(HV)

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 2000V 1A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)

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IXTH1N200P3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTx1N200P3(HV)
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	646pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3

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IXTH1N200P3 - Tags

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