SPB80P06PGATMA1
SPB80P06PGATMA1
Part Number SPB80P06PGATMA1
Description MOSFET P-CH 60V 80A TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2
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SPB80P06PGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SPB80P06P G
Standard Package 1
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V
FET Feature -
Power Dissipation (Max) 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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