RFD3055LE
RFD3055LE
Part Number RFD3055LE
Description MOSFET N-CH 60V 11A I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK
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RFD3055LE - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RFD3055LE/LESM, RFP3055LE
Standard Package 1800
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 107mOhm @ 8A, 5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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