Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHU5N50D-GE3

SIHU5N50D-GE3

SIHU5N50D-GE3

Part NumberSIHU5N50D-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 5.3A TO251 IPAK

DatasheetSIHU5N50D

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-251

To learn about the specification of SIHU5N50D-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHU5N50D-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHU5N50D-GE3.
We are offering SIHU5N50D-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHU5N50D-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU5N50D
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

SIHU5N50D-GE3 - Related Products

	IRFP360LCPBF	Vishay Siliconix, N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-247-3,	View
	BSC017N04NSGATMA1	Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IPB600N25N3GATMA1	Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IRFU420PBF	Vishay Siliconix, N-Channel 500V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	SIR140DP-T1-RE3	Vishay Siliconix, N-Channel 25V 71.9A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STP16N65M5	STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220-3, MDmesh™ V	View
	IRL3103PBF	Infineon Technologies, N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®	View
	SSM6K341NU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H	View
	IPB107N20N3GATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	IXFA6N120P	IXYS, N-Channel 1200V 6A (Tc) 250W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™, PolarP2™	View
	IXFN360N10T	IXYS, N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IPD60R180P7ATMA1	Infineon Technologies, N-Channel 650V 18A (Tc) 72W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View

SIHU5N50D-GE3 - Tags

SIHU5N50D-GE3 SIHU5N50D-GE3 PDF SIHU5N50D-GE3 datasheet SIHU5N50D-GE3 specification SIHU5N50D-GE3 image SIHU5N50D-GE3 India Renesas Electronics India SIHU5N50D-GE3 buy SIHU5N50D-GE3 SIHU5N50D-GE3 price SIHU5N50D-GE3 distributor SIHU5N50D-GE3 supplier SIHU5N50D-GE3 wholesales