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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB123N10N3G, (IPP,IPI)126N10N3
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Nexperia USA Inc., N-Channel 30V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
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FDD86326
ON Semiconductor, N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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FQP11N40C
ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Through Hole TO-220-3, QFET®
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