Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RFD12N06RLESM9A

RFD12N06RLESM9A

RFD12N06RLESM9A

Part NumberRFD12N06RLESM9A

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 18A DPAK

DatasheetRFD12N06RLESM

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA

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RFD12N06RLESM9A - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RFD12N06RLESM
Standard Package	1
Manufacturer	ON Semiconductor
Series	UltraFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	485pF @ 25V
FET Feature	-
Power Dissipation (Max)	49W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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