RDD023N50TL
RDD023N50TL
Part Number RDD023N50TL Description MOSFET N-CH 500V 2A CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 500V 2A (Tc) 20W (Tc) Surface Mount CPT3
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RDD023N50TL - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RDD023N50 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 5.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 151pF @ 25V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package CPT3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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