Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ PMXB360ENEAZ

PMXB360ENEAZ

PMXB360ENEAZ

Part NumberPMXB360ENEAZ

ManufacturerNexperia USA Inc.

DescriptionMOSFET N-CH 80V 1.1A 3DFN

DatasheetPMXB360ENEA

Package / Case3-XDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3

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PMXB360ENEAZ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMXB360ENEA
Standard Package	5000
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	130pF @ 40V
FET Feature	-
Power Dissipation (Max)	400mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010D-3
Package / Case	3-XDFN Exposed Pad

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