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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9614-60E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 12.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 25V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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DMTH10H010SPSQ-13
Diodes Incorporated, N-Channel 100V 11.8A (Ta), 100A (Tc) 1.5W (Ta), 166W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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Infineon Technologies, N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB, HEXFET®
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ON Semiconductor, N-Channel 250V 1.2A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-2,
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ON Semiconductor, N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220F, SuperFET™
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SI8424CDB-T1-E1
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Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
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Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,
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SQ4840EY-T1_GE3
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R6004JND3TL1
Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount TO-252,
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SQJA46EP-T1_GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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