IPD26N06S2L35ATMA2
IPD26N06S2L35ATMA2
Part Number IPD26N06S2L35ATMA2
Description MOSFET N-CH 55V 30A TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 55V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11
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IPD26N06S2L35ATMA2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD26N06S2L-35
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 621pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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