NVC3S5A51PLZT1G
NVC3S5A51PLZT1G
Part Number NVC3S5A51PLZT1G Description MOSFET P-CHANNEL 60V 1.8A 3-CPH Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH
To learn about the specification of NVC3S5A51PLZT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVC3S5A51PLZT1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVC3S5A51PLZT1G.
We are offering NVC3S5A51PLZT1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NVC3S5A51PLZT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NVC3S5A51PLZ Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 262pF @ 20V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CPH Package / Case TO-236-3, SC-59, SOT-23-3
NVC3S5A51PLZT1G - Related ProductsMore >>
IXTH8P50 IXYS, P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH),
View
SSM6J507NU,LF Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
View
MIC94051YM4-TR Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™
View
STD46P4LLF6 STMicroelectronics, P-Channel 40V 46A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6
View
DMP31D0UFB4-7B Diodes Incorporated, P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3,
View
DMP4025LSS-13 Diodes Incorporated, P-Channel 40V 6A (Ta) 1.52W (Ta) Surface Mount 8-SO,
View
SIUD401ED-T1-GE3 Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III
View
SI7463DP-T1-E3 Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SQ4483BEEY-T1_GE3 Vishay Siliconix, P-Channel 30V 22A (Tc) 7W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®
View
SSM3J371R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
RQ5A030APTL Rohm Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount TSMT3,
View
SI2333CDS-T1-GE3 Vishay Siliconix, P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
NVC3S5A51PLZT1G - Tags
English
