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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NVB072N65S3
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, SuperFET® III, FRFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 400V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-3 (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 600V 43A (Tc) 313W (Tc) Through Hole TO-247AC,
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IRFI4510GPBF
Infineon Technologies, N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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