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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NVB072N65S3
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, SuperFET® III, FRFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 400V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-3 (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFP34N65X2
IXYS, N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-220AB, HiPerFET™
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PSMN012-80BS,118
Nexperia USA Inc., N-Channel 80V 74A (Tc) 148W (Tc) Surface Mount D2PAK,
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BSC014N03LSGATMA1
Infineon Technologies, N-Channel 30V 34A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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STW11NK100Z
STMicroelectronics, N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3, SuperMESH™
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IRLS640A
ON Semiconductor, N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220F,
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TK14A65W,S5X
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 40W (Tc) Through Hole TO-220SIS, DTMOSIV
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SIHG80N60E-GE3
Vishay Siliconix, N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC,
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MCQ4822-TP
Micro Commercial Co, N-Channel 30V 8.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP,
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R6020ENJTL
Rohm Semiconductor, N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
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AOT290L
Alpha & Omega Semiconductor Inc., N-Channel 100V 18A (Ta), 140A (Tc) 2.1W (Ta), 500W (Tc) Through Hole TO-220,
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BUK768R1-100E,118
Nexperia USA Inc., N-Channel 100V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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PSMN013-100BS,118
Nexperia USA Inc., N-Channel 100V 68A (Tc) 170W (Tc) Surface Mount D2PAK,
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