Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

Part NumberIPD60R3K3C6ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 1.7A TO252-3

DatasheetIPD60R3K3C6

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD60R3K3C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R3K3C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R3K3C6ATMA1.
We are offering IPD60R3K3C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD60R3K3C6ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R3K3C6
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ C6
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	93pF @ 100V
FET Feature	-
Power Dissipation (Max)	18.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R3K3C6ATMA1 - Related Products

	SPB07N60C3ATMA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	CSD18534KCS	Texas Instruments, N-Channel 60V 45A (Ta), 100A (Tc) 107W (Tc) Through Hole TO-220-3, NexFET™	View
	SUP40012EL-GE3	Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Through Hole TO-220AB, TrenchFET®	View
	FDB15N50	ON Semiconductor, N-Channel 500V 15A (Tc) 300W (Tc) Surface Mount D²PAK,	View
	SI7178DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IXFN70N60Q2	IXYS, N-Channel 600V 70A (Tc) 890W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IXFN360N10T	IXYS, N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	TPW1R005PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 45V 300A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H	View
	MCMN2012-TP	Micro Commercial Co, N-Channel 20V 12A (Ta) Surface Mount DFN2020-6J,	View
	SUM60N10-17-E3	Vishay Siliconix, N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FCH041N65EFL4	ON Semiconductor, N-Channel 650V 76A (Tc) 595W (Tc) Through Hole TO-247, FRFET®, SuperFET® II	View
	IXTN60N50L2	IXYS, N-Channel 500V 53A (Tc) 735W (Tc) Chassis Mount SOT-227B, Linear L2™	View

IPD60R3K3C6ATMA1 - Tags

IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 PDF IPD60R3K3C6ATMA1 datasheet IPD60R3K3C6ATMA1 specification IPD60R3K3C6ATMA1 image IPD60R3K3C6ATMA1 India Renesas Electronics India IPD60R3K3C6ATMA1 buy IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 price IPD60R3K3C6ATMA1 distributor IPD60R3K3C6ATMA1 supplier IPD60R3K3C6ATMA1 wholesales