NTS4173PT1G
NTS4173PT1G
Part Number NTS4173PT1G Description MOSFET P-CH 30V 1.2A SC70-3 Package / Case SC-70, SOT-323Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
To learn about the specification of NTS4173PT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTS4173PT1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTS4173PT1G.
We are offering NTS4173PT1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTS4173PT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTS4173P Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 430pF @ 15V FET Feature - Power Dissipation (Max) 290mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 (SOT323) Package / Case SC-70, SOT-323
NTS4173PT1G - Related ProductsMore >>
RSR020P05TL Rohm Semiconductor, P-Channel 45V 2A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
FQP12P20 ON Semiconductor, P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®
View
SI7415DN-T1-E3 Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SI8429DB-T1-E1 Vishay Siliconix, P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot, TrenchFET®
View
NTTFS3A08PZTAG ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),
View
SI7149ADP-T1-GE3 Vishay Siliconix, P-Channel 30V 50A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SSM3J356R,LF Toshiba Semiconductor and Storage, P-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
2SJ305TE85LF Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,
View
SPD09P06PLGBTMA1 Infineon Technologies, P-Channel 60V 9.7A (Tc) 42W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
SIS443DN-T1-GE3 Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FQP7P06 ON Semiconductor, P-Channel 60V 7A (Tc) 45W (Tc) Through Hole TO-220-3, QFET®
View
SSM3J371R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
NTS4173PT1G - Tags
English
