NTD4815N-35G
NTD4815N-35G
Part Number NTD4815N-35G Description MOSFET NCH 30V 6.9A IPAK TRIMMED Package / Case TO-251-3 Stub Leads, IPakUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-PAK
To learn about the specification of NTD4815N-35G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTD4815N-35G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTD4815N-35G.
We are offering NTD4815N-35G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTD4815N-35G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTD4815N Standard Package 75 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 15mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V FET Feature - Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak
NTD4815N-35G - Related ProductsMore >>
IRF540NSTRLPBF Infineon Technologies, N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK, HEXFET®
View
IPD80R1K2P7ATMA1 Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
PSMN130-200D,118 Nexperia USA Inc., N-Channel 200V 20A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™
View
TK58E06N1,S1X Toshiba Semiconductor and Storage, N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220, U-MOSVIII-H
View
PSMN8R7-80BS,118 Nexperia USA Inc., N-Channel 80V 90A (Tc) 170W (Tc) Surface Mount D2PAK,
View
FDD6690A ON Semiconductor, N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®
View
IRFPF40PBF Vishay Siliconix, N-Channel 900V 4.7A (Tc) 150W (Tc) Through Hole TO-247-3,
View
IPB160N04S203ATMA4 Infineon Technologies, N-Channel 40V 160A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
DMN10H120SE-13 Diodes Incorporated, N-Channel 100V 3.6A (Ta) 1.3W (Ta) Surface Mount SOT-223,
View
SSM3K56CT,L3F Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H
View
BSC061N08NS5ATMA1 Infineon Technologies, N-Channel 80V 82A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
View
DMN65D8LQ-7 Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
NTD4815N-35G - Tags
English
