FCP11N60N
FCP11N60N
Part Number FCP11N60N
Description MOSFET N-CH 600V 10.8A TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 10.8A (Tc) 94W (Tc) Through Hole TO-220-3
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FCP11N60N - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCP11N60N, FCPF11N60NT
Standard Package 800
Manufacturer ON Semiconductor
Series SupreMOS™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1505pF @ 100V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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