SIRA62DP-T1-RE3
SIRA62DP-T1-RE3
Part Number SIRA62DP-T1-RE3 Description MOSFET N-CHAN 30V Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 51.4A (Ta), 80A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIRA62DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA62DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA62DP-T1-RE3.
We are offering SIRA62DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIRA62DP-T1-RE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIRA62DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 51.4A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) +16V, -12V Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 15V FET Feature - Power Dissipation (Max) 5.2W (Ta), 65.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIRA62DP-T1-RE3 - Related ProductsMore >>
FCH47N60N ON Semiconductor, N-Channel 600V 47A (Tc) 368W (Tc) Through Hole TO-247-3, SupreMOS™
View
CSD17318Q2 Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™
View
TK10P60W,RVQ Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
View
CSD19506KTT Texas Instruments, N-Channel 80V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
View
RD3U040CNTL1 Rohm Semiconductor, N-Channel 250V 4A (Tc) 29W (Tc) Surface Mount TO-252,
View
SI7858ADP-T1-E3 Vishay Siliconix, N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STP120NF10 STMicroelectronics, N-Channel 100V 110A (Tc) 312W (Tc) Through Hole TO-220AB, STripFET™ II
View
HUF75545S3ST ON Semiconductor, N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™
View
NVR5198NLT1G ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
NVHL110N65S3F ON Semiconductor, N-Channel 650V 30A (Tc) 240W (Tc) Through Hole TO-247-3, Automotive, AEC-Q101, SuperFET® III, FRFET®
View
TSM120N06LCS RLG Taiwan Semiconductor Corporation, N-Channel 60V 23A (Tc) 12.5W (Tc) Surface Mount 8-SOP,
View
IRFBG30PBF Vishay Siliconix, N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB,
View
SIRA62DP-T1-RE3 - Tags
English
