Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB35N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	70A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	68ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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RGCL60TK60GC11	Rohm Semiconductor, IGBT Trench Field Stop 600V 30A 54W Through Hole TO-3PFM,	View
SGL160N60UFDTU	ON Semiconductor, IGBT 600V 160A 250W Through Hole TO-264-3,	View
IXYJ20N120C3D1	IXYS, IGBT 1200V 21A 105W Through Hole ISO247™, GenX3™, XPT™	View
RGPZ10BM40FHTL	Rohm Semiconductor, IGBT 460V 20A 107W Surface Mount TO-252, Automotive, AEC-Q101	View
IKZ50N65NH5XKSA1	Infineon Technologies, IGBT Trench 650V 85A 273W Through Hole PG-TO247-4, TrenchStop™ 5	View
FGD5T120SH	ON Semiconductor, IGBT Trench Field Stop 1200V 10A 69W Surface Mount DPAK,	View
IRG4PH30KPBF	Infineon Technologies, IGBT 1200V 20A 100W Through Hole TO-247AC,	View
STGB15M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 30A 136W Surface Mount D2PAK,	View
NGTB40N120IHRWG	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 384W Through Hole TO-247,	View
APT36GA60BD15	Microsemi Corporation, IGBT PT 600V 65A 290W Through Hole TO-247 [B], POWER MOS 8™	View
STGB30H60DFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View

NGTB35N65FL2WG

Part NumberNGTB35N65FL2WG