Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB35N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	70A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	68ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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IRG4PSC71UDPBF	Infineon Technologies, IGBT 600V 85A 350W Through Hole SUPER-247™ (TO-274AA),	View
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IKW75N65EH5XKSA1	Infineon Technologies, IGBT Trench 650V 90A 395W Through Hole PG-TO247-3, TrenchStop™	View
IGB50N65S5ATMA1	Infineon Technologies, IGBT Trench Field Stop 650V 80A 270W Surface Mount PG-TO263-3, TrenchStop™ 5	View
IXBX55N300	IXYS, IGBT 3000V 130A 625W Through Hole PLUS247™-3, BIMOSFET™	View
RGCL80TS60DGC11	Rohm Semiconductor, IGBT Trench Field Stop 600V 65A 148W Through Hole TO-247N,	View
STGP6NC60HD	STMicroelectronics, IGBT 600V 15A 56W Through Hole TO-220AB, PowerMESH™	View
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NGTB35N65FL2WG

Part NumberNGTB35N65FL2WG