Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB35N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	70A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	68ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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STGFW20H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 40A 52W Through Hole TO-3PF,	View
IRGB4620DPBF	Infineon Technologies, IGBT 600V 32A 140W Through Hole TO-220AC,	View
STGP40V60F	STMicroelectronics, IGBT Trench Field Stop 600V 80A 283W Through Hole TO-220,	View
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NGTB35N65FL2WG

Part NumberNGTB35N65FL2WG