Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGW60H65DRF
Standard Package	30
Manufacturer	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	120A
Current - Collector Pulsed (Icm)	240A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 60A
Power - Max	420W
Switching Energy	940µJ (on), 1.06mJ (off)
Input Type	Standard
Gate Charge	217nC
Td (on/off) @ 25°C	85ns/178ns
Test Condition	400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	19ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

APT68GA60B	Microsemi Corporation, IGBT PT 600V 121A 520W Through Hole TO-247 [B], POWER MOS 8™	View
STGW25H120F2	STMicroelectronics, IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247,	View
IXXK110N65B4H1	IXYS, IGBT PT 650V 240A 880W Through Hole TO-264 (IXXK), GenX4™, XPT™	View
STGB10M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 20A 115W Surface Mount D2PAK,	View
RGT00TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N,	View
IXBL60N360	IXYS, IGBT 3600V 92A 417W Through Hole ISOPLUSi5-Pak™, BIMOSFET™	View
APT25GT120BRG	Microsemi Corporation, IGBT NPT 1200V 54A 347W Through Hole TO-247 [B], Thunderbolt IGBT®	View
APT35GP120BG	Microsemi Corporation, IGBT PT 1200V 96A 543W Through Hole TO-247 [B], POWER MOS 7®	View
IXYJ20N120C3D1	IXYS, IGBT 1200V 21A 105W Through Hole ISO247™, GenX3™, XPT™	View
FGA40T65SHD	ON Semiconductor, IGBT Trench Field Stop 650V 80A 268W Through Hole TO-3PN,	View
AOT10B65M1	Alpha & Omega Semiconductor Inc., IGBT 650V 20A 150W Through Hole TO-220, Alpha IGBT™	View
STGB14NC60KDT4	STMicroelectronics, IGBT 600V 25A 80W Surface Mount D2PAK, PowerMESH™	View

STGW60H65DRF

Part NumberSTGW60H65DRF