Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGW10M65DF2 Datasheet
Standard Package	1200
Manufacturer	STMicroelectronics
Series	M
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	20A
Current - Collector Pulsed (Icm)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Power - Max	115W
Switching Energy	120µJ (on), 270µJ (off)
Input Type	Standard
Gate Charge	28nC
Td (on/off) @ 25°C	19ns/91ns
Test Condition	400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)	96ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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FGY160T65SPD-F085	ON Semiconductor, IGBT Trench Field Stop 650V 240A 882W Through Hole TO-247, Automotive, AEC-Q101	View
IXYA50N65C3	IXYS, IGBT PT 650V 130A 600W Surface Mount TO-263, GenX3™, XPT™	View
RGT00TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N,	View
IRG4PC40FDPBF	Infineon Technologies, IGBT 600V 49A 160W Through Hole TO-247AC,	View
IXLF19N250A	IXYS, IGBT NPT 2500V 32A 250W Through Hole ISOPLUS i4-PAC™,	View
APT50GT60BRDQ2G	Microsemi Corporation, IGBT NPT 600V 110A 446W Through Hole TO-247 [B], Thunderbolt IGBT®	View
IRGB30B60KPBF	Infineon Technologies, IGBT NPT 600V 78A 370W Through Hole TO-220AB,	View
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STGW10M65DF2

Part NumberSTGW10M65DF2