STGW10M65DF2
STGW10M65DF2
Part Number STGW10M65DF2 Description TRENCH GATE FIELD-STOP IGBT M SE Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT Trench Field Stop 650V 20A 115W Through Hole TO-247
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STGW10M65DF2 - Product Attributes
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Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet STGW10M65DF2 Datasheet Standard Package 1200 Manufacturer STMicroelectronics Series M Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A Power - Max 115W Switching Energy 120µJ (on), 270µJ (off) Input Type Standard Gate Charge 28nC Td (on/off) @ 25°C 19ns/91ns Test Condition 400V, 10A, 22Ohm, 15V Reverse Recovery Time (trr) 96ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247
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