Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 20mA, 5V
Gain	12dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

BFR181E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-23-3,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
BFR193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-23-3,	View
BFR360FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3,	View
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
BFP760H6327XTSA1	Infineon Technologies, RF Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
MMBTH10-TP	Micro Commercial Co, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23,	View
2N2857	Central Semiconductor Corp, RF Transistor NPN 15V 40mA 1.9GHz 200mW Through Hole TO-72,	View
2N5179	Central Semiconductor Corp, RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72,	View
BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View

MT3S20TU(TE85L)

Part NumberMT3S20TU(TE85L)