Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S20TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 20mA, 5V
Gain	12dB
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Supplier Device Package	UFM

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MT3S20TU(TE85L)

Part NumberMT3S20TU(TE85L)