Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	30GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.4dB @ 1.8GHz
Gain	20dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 3.5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Base Part Number	BFP540

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BFP540FESDH6327XTSA1

Part NumberBFP540FESDH6327XTSA1