Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFQ19S
Standard Package	1000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	3dB @ 1.8GHz
Gain	7dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 70mA, 8V
Current - Collector (Ic) (Max)	120mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89-3

2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View
MMBTH10M3T5G	ON Semiconductor, RF Transistor NPN 25V 650MHz 265mW Surface Mount SOT-723,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
2N5109	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
2SC4618TLP	Rohm Semiconductor, RF Transistor NPN 25V 50mA 300MHz 150mW Surface Mount EMT3,	View

BFQ19SH6327XTSA1

Part NumberBFQ19SH6327XTSA1