Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR740L3RH
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	42GHz
Noise Figure (dB Typ @ f)	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain	24.5dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 25mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3
Base Part Number	BFR740

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2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini,	View
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BFR740L3RHE6327XTSA1

Part NumberBFR740L3RHE6327XTSA1