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LND150N3-G

LND150N3-G

Part NumberLND150N3-G

ManufacturerMicrochip Technology

DescriptionMOSFET N-CH 500V 30MA TO92-3

DatasheetLND150

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

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LND150N3-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	LND150
Standard Package	1000
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	740mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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