FQP85N06
FQP85N06
Part Number FQP85N06
Description MOSFET N-CH 60V 85A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 85A (Tc) 160W (Tc) Through Hole TO-220-3
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FQP85N06 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQP85N06
Standard Package 1000
Manufacturer ON Semiconductor
Series QFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 42.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4120pF @ 25V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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