Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

Part NumberTPW4R50ANH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 100V 92A 8DSOP

DatasheetTPW4R50ANH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW4R50ANH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW4R50ANH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW4R50ANH,L1Q.
We are offering TPW4R50ANH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW4R50ANH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW4R50ANH
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 50V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW4R50ANH,L1Q - Related Products

	IRF40R207	Infineon Technologies, N-Channel 40V 56A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak), HEXFET®, StrongIRFET™	View
	STD120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI	View
	RS1E350BNTB	Rohm Semiconductor, N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP,	View
	IRFS9N60ATRLPBF	Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,	View
	DMN2011UFDE-7	Diodes Incorporated, N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	SI8410DB-T2-E1	Vishay Siliconix, N-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1), TrenchFET®	View
	PMZB150UNEYL	Nexperia USA Inc., N-Channel 20V 1.5A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3,	View
	IPD60R280CFD7ATMA1	Infineon Technologies, N-Channel 650V 9A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CFD7	View
	RHU003N03FRAT106	Rohm Semiconductor, N-Channel 30V 300mA (Ta) 200mW Surface Mount UMT3, Automotive, AEC-Q101	View
	R6015ENX	Rohm Semiconductor, N-Channel 600V 15A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	SSM3K2615TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount UFM, π-MOSV	View
	FDB8441	ON Semiconductor, N-Channel 40V 28A (Ta), 120A (Tc) 300W (Tc) Surface Mount TO-263AB, PowerTrench®	View

TPW4R50ANH,L1Q - Tags

TPW4R50ANH,L1Q TPW4R50ANH,L1Q PDF TPW4R50ANH,L1Q datasheet TPW4R50ANH,L1Q specification TPW4R50ANH,L1Q image TPW4R50ANH,L1Q India Renesas Electronics India TPW4R50ANH,L1Q buy TPW4R50ANH,L1Q TPW4R50ANH,L1Q price TPW4R50ANH,L1Q distributor TPW4R50ANH,L1Q supplier TPW4R50ANH,L1Q wholesales