IXTQ52P10P
IXTQ52P10P
Part Number IXTQ52P10P
Manufacturer IXYS
Description MOSFET P-CH 100V 52A TO-3P
Package / Case TO-3P-3, SC-65-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-3P
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IXTQ52P10P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(A,H,P,Q)52P10P
Standard Package 30
Manufacturer IXYS
Series PolarP™
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
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