FQD10N20LTM
FQD10N20LTM
Part Number FQD10N20LTM
Description MOSFET N-CH 200V 7.6A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak)
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FQD10N20LTM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD10N20L
Standard Package 2500
Manufacturer ON Semiconductor
Series QFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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