SISS26DN-T1-GE3
SISS26DN-T1-GE3
Part Number SISS26DN-T1-GE3
Description MOSFET N-CHANNEL 60V 60A 1212-8S
Package / Case PowerPAK® 1212-8S
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
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SISS26DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS26DN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
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