Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS26DN-T1-GE3

SISS26DN-T1-GE3

SISS26DN-T1-GE3

Part NumberSISS26DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHANNEL 60V 60A 1212-8S

DatasheetSISS26DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS26DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS26DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS26DN-T1-GE3.
We are offering SISS26DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS26DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS26DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS26DN-T1-GE3 - Related Products

	NTB5405NT4G	ON Semiconductor, N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	IXFT120N30X3HV	IXYS, N-Channel 300V 120A (Tc) 735W (Tc) Surface Mount TO-268HV, HiPerFET™	View
	DMTH6010SK3Q-13	Diodes Incorporated, N-Channel 60V 16.3A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	IRFP044NPBF	Infineon Technologies, N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-247AC, HEXFET®	View
	SI4128DY-T1-GE3	Vishay Siliconix, N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STF6N65K3	STMicroelectronics, N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	IPA60R180P7SXKSA1	Infineon Technologies, N-Channel 600V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	IRLML0060TRPBF	Infineon Technologies, N-Channel 60V 2.7A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	ZVN4310GTA	Diodes Incorporated, N-Channel 100V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223,	View
	IPB083N15N5LFATMA1	Infineon Technologies, N-Channel 150V 105A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	TSM05N03CW RPG	Taiwan Semiconductor Corporation, N-Channel 30V 5A (Ta) 3W (Ta) Surface Mount SOT-223,	View
	IPD200N15N3GATMA1	Infineon Technologies, N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View

SISS26DN-T1-GE3 - Tags

SISS26DN-T1-GE3 SISS26DN-T1-GE3 PDF SISS26DN-T1-GE3 datasheet SISS26DN-T1-GE3 specification SISS26DN-T1-GE3 image SISS26DN-T1-GE3 India Renesas Electronics India SISS26DN-T1-GE3 buy SISS26DN-T1-GE3 SISS26DN-T1-GE3 price SISS26DN-T1-GE3 distributor SISS26DN-T1-GE3 supplier SISS26DN-T1-GE3 wholesales