Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS26DN-T1-GE3

SISS26DN-T1-GE3

SISS26DN-T1-GE3

Part NumberSISS26DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHANNEL 60V 60A 1212-8S

DatasheetSISS26DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS26DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS26DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS26DN-T1-GE3.
We are offering SISS26DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS26DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS26DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 30V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS26DN-T1-GE3 - Related Products

	IRF830ASTRLPBF	Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Surface Mount,	View
	CSD13306WT	Texas Instruments, N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™	View
	FDB024N08BL7	ON Semiconductor, N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7, PowerTrench®	View
	SI1424EDH-T1-GE3	Vishay Siliconix, N-Channel 20V 4A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SOT-363, TrenchFET®	View
	STD5N80K5	STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™	View
	IPC90N04S53R6ATMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 63W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™	View
	SIS476DN-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BUK9628-55A,118	Nexperia USA Inc., N-Channel 55V 42A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SIS782DN-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 41W (Tc) Surface Mount PowerPAK® 1212-8,	View
	RD3P050SNFRATL	Rohm Semiconductor, N-Channel 100V 5A (Ta) 15W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	IPN60R2K1CEATMA1	Infineon Technologies, N-Channel 600V 3.7A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™	View
	IRF7473TRPBF	Infineon Technologies, N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View

SISS26DN-T1-GE3 - Tags

SISS26DN-T1-GE3 SISS26DN-T1-GE3 PDF SISS26DN-T1-GE3 datasheet SISS26DN-T1-GE3 specification SISS26DN-T1-GE3 image SISS26DN-T1-GE3 India Renesas Electronics India SISS26DN-T1-GE3 buy SISS26DN-T1-GE3 SISS26DN-T1-GE3 price SISS26DN-T1-GE3 distributor SISS26DN-T1-GE3 supplier SISS26DN-T1-GE3 wholesales