IXTN60N50L2


IXTN60N50L2

Part NumberIXTN60N50L2

Manufacturer

Description

Datasheet

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTN60N50L2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package10
ManufacturerIXYS
SeriesLinear L2™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs610nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds24000pF @ 25V
FET Feature-
Power Dissipation (Max)735W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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IXTN60N50L2 - Tags

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