IPB70N10S312ATMA1
IPB70N10S312ATMA1
Part Number IPB70N10S312ATMA1 Description MOSFET N-CH 100V 70A TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 70A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
To learn about the specification of IPB70N10S312ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB70N10S312ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB70N10S312ATMA1.
We are offering IPB70N10S312ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB70N10S312ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx70N10S3-12 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.3mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB70N10S312ATMA1 - Related ProductsMore >>
DMN26D0UT-7 Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,
View
FQP65N06 ON Semiconductor, N-Channel 60V 65A (Tc) 150W (Tc) Through Hole TO-220-3, QFET®
View
IRLH5034TRPBF Infineon Technologies, N-Channel 40V 29A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®
View
IRFS3107TRL7PP Infineon Technologies, N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
View
IXTA06N120P IXYS, N-Channel 1200V 600mA (Tc) 42W (Tc) Surface Mount TO-263 (IXTA), PolarVHV™
View
PMZ600UNELYL Nexperia USA Inc., N-Channel 20V 600mA (Tc) 2.7W (Tc) Surface Mount DFN1006-3,
View
FDMA86108LZ ON Semiconductor, N-Channel 100V 2.2A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
SI7414DN-T1-GE3 Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRF300P227 Infineon Technologies, N-Channel 300V 50A (Tc) 313W (Tc) Through Hole TO-247AC, StrongIRFET™
View
SIHG47N60AEL-GE3 Vishay Siliconix, N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC, EL
View
STD1NK80ZT4 STMicroelectronics, N-Channel 800V 1A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™
View
STD5NM60-1 STMicroelectronics, N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK, MDmesh™
View
IPB70N10S312ATMA1 - Tags
English
