IXFT6N100F
IXFT6N100F
Part Number IXFT6N100F
Description MOSFET N-CH 1000V 6A TO268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Lead Time To be Confirmed
Detailed Description N-Channel 1000V 6A (Tc) 180W (Tc) Surface Mount TO-268 (IXFT)
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IXFT6N100F - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFH6N100F, IXFT6N100F
Standard Package 30
Manufacturer IXYS-RF
Series HiPerRF™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268 (IXFT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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