IXFT6N100F


IXFT6N100F

Part NumberIXFT6N100F

Manufacturer

Description

Datasheet

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXFT6N100F - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerIXYS-RF
SeriesHiPerRF™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1770pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268 (IXFT)
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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IXFT6N100F - Tags

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