FQNL2N50BTA
FQNL2N50BTA
Part Number FQNL2N50BTA
Description MOSFET N-CH 500V 0.35A TO-92-3
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
To learn about the specification of FQNL2N50BTA, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQNL2N50BTA with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQNL2N50BTA.
We are offering FQNL2N50BTA for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQNL2N50BTA - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQNL2N50B
Standard Package 2000
Manufacturer ON Semiconductor
Series QFET®
Packaging Tape & Box (TB)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
FQNL2N50BTA - Related ProductsMore >>
SI3442BDV-T1-E3
Vishay Siliconix, N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP, TrenchFET®
View
IRFR3504ZTRPBF
Infineon Technologies, N-Channel 40V 42A (Tc) 90W (Tc) Surface Mount D-Pak, HEXFET®
View
IXTQ36N50P
IXYS, N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P, PolarHV™
View
FQP19N20
ON Semiconductor, N-Channel 200V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3, QFET®
View
PSMN050-80BS,118
Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,
View
IRF830SPBF
Vishay Siliconix, N-Channel 500V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,
View
IXFK230N20T
IXYS, N-Channel 200V 230A (Tc) 1670W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™
View
IRFR120ZTRPBF
Infineon Technologies, N-Channel 100V 8.7A (Tc) 35W (Tc) Surface Mount D-Pak, HEXFET®
View
IRFS7734TRL7PP
Infineon Technologies, N-Channel 75V 197A (Tc) 294W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™
View
CSD19531Q5A
Texas Instruments, N-Channel 100V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
VN0106N3-G
Microchip Technology, N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
TPW1R306PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance, U-MOSIX-H
View
FQNL2N50BTA - Tags