FQNL2N50BTA

Part NumberFQNL2N50BTA

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQNL2N50B
Standard Package	2000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tape & Box (TB)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)

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