IXFK180N10
IXFK180N10
Part Number IXFK180N10
Manufacturer IXYS
Description MOSFET N-CH 100V 180A TO-264AA
Package / Case TO-264-3, TO-264AA
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)
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IXFK180N10 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXF(K,X)180N10
Standard Package 25
Manufacturer IXYS
Series HiPerFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10900pF @ 25V
FET Feature -
Power Dissipation (Max) 560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA
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