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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R4-30B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4951pF @ 25V
FET Feature -
Power Dissipation (Max) 255W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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Nexperia USA Inc., N-Channel 30V 59A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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RSS070N05FRATB
Rohm Semiconductor, N-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101
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Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2], POWER MOS 8™
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