IXFB110N60P3
IXFB110N60P3
Part Number IXFB110N60P3 Manufacturer IXYS Description MOSFET N-CH 600V 110A PLUS264 Package / Case TO-264-3, TO-264AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 110A (Tc) 1890W (Tc) Through Hole PLUS264™
To learn about the specification of IXFB110N60P3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFB110N60P3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFB110N60P3.
We are offering IXFB110N60P3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IXFB110N60P3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFB110N60P3 Standard Package 25 Manufacturer IXYS Series HiPerFET™, Polar3™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 56mOhm @ 55A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 245nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 18000pF @ 25V FET Feature - Power Dissipation (Max) 1890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA
IXFB110N60P3 - Related ProductsMore >>
DMN21D2UFB-7B Diodes Incorporated, N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
STP24N60DM2 STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220, FDmesh™ II Plus
View
RDR005N25TL Rohm Semiconductor, N-Channel 250V 500mA (Ta) 540mW (Ta) Surface Mount TSMT3,
View
SIR440DP-T1-GE3 Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIS412DN-T1-GE3 Vishay Siliconix, N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IXTF1N450 IXYS, N-Channel 4500V 900mA (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™,
View
STD7N90K5 STMicroelectronics, N-Channel 900V 7A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ K5
View
RQ7E110AJTCR Rohm Semiconductor, N-Channel 30V 11A (Tc) 1.5W (Tc) Surface Mount TSMT8,
View
TK90S06N1L,LQ Toshiba Semiconductor and Storage, N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3, U-MOSVIII-H
View
TSM70N1R4CP ROG Taiwan Semiconductor Corporation, N-Channel 700V 3.3A (Tc) 38W (Tc) Surface Mount TO-252, (D-Pak),
View
IRF840APBF Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,
View
BSS126H6906XTSA1 Infineon Technologies, N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
IXFB110N60P3 - Tags
English
