Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFB110N60P3

IXFB110N60P3

IXFB110N60P3

Part NumberIXFB110N60P3

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 110A PLUS264

DatasheetIXFB110N60P3

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 110A (Tc) 1890W (Tc) Through Hole PLUS264™

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IXFB110N60P3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFB110N60P3
Standard Package	25
Manufacturer	IXYS
Series	HiPerFET™, Polar3™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	56mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	245nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	18000pF @ 25V
FET Feature	-
Power Dissipation (Max)	1890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA

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IXFB110N60P3 - Tags

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