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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFBC30AS,AL, SiHFBC30AS,AL
Standard Package 1000
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DMT8012LK3-13
Diodes Incorporated, N-Channel 80V 44A (Tc) 2.7W (Ta) Surface Mount TO-252,
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PSMN4R0-25YLC,115
Nexperia USA Inc., N-Channel 25V 84A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,
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IRFP4229PBF
Infineon Technologies, N-Channel 250V 44A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®
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STD17NF25
STMicroelectronics, N-Channel 250V 17A (Tc) 90W (Tc) Surface Mount DPAK, STripFET™ II
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STH175N4F6-6AG
STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6
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IPZA60R080P7XKSA1
Infineon Technologies, N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7
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NVTFS5C658NLTAG
ON Semiconductor, N-Channel 60V 109A (Tc) 114W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101
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TPH8R903NL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 1.6W (Ta), 24W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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PSMN2R8-40BS,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Surface Mount D2PAK,
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DMN3030LFG-7
Diodes Incorporated, N-Channel 30V 5.3A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,
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SIHA2N80E-GE3
Vishay Siliconix, N-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack,
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PSMN9R5-100PS,127
Nexperia USA Inc., N-Channel 100V 89A (Tc) 211W (Tc) Through Hole TO-220AB,
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