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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N50DM2AG
Standard Package 1
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 84mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP11N40C
ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Through Hole TO-220-3, QFET®
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IXFN210N20P
IXYS, N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B, HiPerFET™
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TSM70N1R4CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 3.3A (Tc) 38W (Tc) Surface Mount TO-252, (D-Pak),
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SUD50N03-06AP-E3
Vishay Siliconix, N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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STP28NM60ND
STMicroelectronics, N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II
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IXTH130N15X4
IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Through Hole TO-247,
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IRL640STRLPBF
Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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FDD3N40TM
ON Semiconductor, N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount D-Pak, UniFET™
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STP10LN80K5
STMicroelectronics, N-Channel 800V 8A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™
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DMT10H015LSS-13
Diodes Incorporated, N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO,
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TSM4N60ECP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 86.2W (Tc) Surface Mount TO-252, (D-Pak),
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IXTX1R4N450HV
IXYS, N-Channel 4500V 1.4A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV,
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