SIR440DP-T1-GE3
SIR440DP-T1-GE3
Part Number SIR440DP-T1-GE3 Description MOSFET N-CH 20V 60A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR440DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR440DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR440DP-T1-GE3.
We are offering SIR440DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR440DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR440DP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.55mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR440DP-T1-GE3 - Related ProductsMore >>
IRLP3034PBF Infineon Technologies, N-Channel 40V 195A (Tc) 341W (Tc) Through Hole TO-247AC, HEXFET®
View
TK650A60F,S4X Toshiba Semiconductor and Storage, N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS, U-MOSIX
View
SI2308CDS-T1-GE3 Vishay Siliconix, N-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET® Gen IV
View
SIE882DF-T1-GE3 Vishay Siliconix, N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®
View
IPA80R450P7XKSA1 Infineon Technologies, N-Channel 800V 11A (Tc) 29W (Tc) Through Hole TO-220-3F, CoolMOS™
View
IRLSL4030PBF Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262, HEXFET®
View
CSD17585F5 Texas Instruments, N-Channel 30V 5.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IPW80R360P7XKSA1 Infineon Technologies, N-Channel 800V 13A (Tc) 84W (Tc) Through Hole PG-TO247-3-41, CoolMOS™ P7
View
STL260N3LLH6 STMicroelectronics, N-Channel 30V 260A (Tc) 166W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ H6
View
FDN357N ON Semiconductor, N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
View
SVD5867NLT4G ON Semiconductor, N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3,
View
NTR4003NT3G ON Semiconductor, N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SIR440DP-T1-GE3 - Tags
English
